| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N4397A |
Silicon Tunnel Diode |
Motorola |
| 92 |
1N4397B |
Silicon Tunnel Diode |
Motorola |
| 93 |
1N4398 |
Silicon Tunnel Diode |
Motorola |
| 94 |
1N4398A |
Silicon Tunnel Diode |
Motorola |
| 95 |
1N4398B |
Silicon Tunnel Diode |
Motorola |
| 96 |
1N4399 |
Silicon Tunnel Diode |
Motorola |
| 97 |
1N4399A |
Silicon Tunnel Diode |
Motorola |
| 98 |
1N4399B |
Silicon Tunnel Diode |
Motorola |
| 99 |
AEY23 |
Tunnel Diode |
Philips |
| 100 |
AEY24 |
Tunnel Diode |
Philips |
| 101 |
AEY25 |
Tunnel Diode |
Philips |
| 102 |
AEY26 |
Tunnel Diode |
Philips |
| 103 |
AEY27 |
Tunnel Diode |
Philips |
| 104 |
AEY28 |
Tunnel Diode |
Philips |
| 105 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 106 |
AEY30A |
Germanium Tunnel Diode |
Siemens |
| 107 |
AEY30A |
Germanium Tunnel Diode |
Siemens |
| 108 |
AEY30A |
Germanium tunnel diode |
Siemens |
| 109 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 110 |
AEY30B |
Germanium Tunnel Diode |
Siemens |
| 111 |
AEY30B |
Germanium Tunnel Diode |
Siemens |
| 112 |
AEY30B |
Germanium tunnel diode |
Siemens |
| 113 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 114 |
AEY30C |
Germanium Tunnel Diode |
Siemens |
| 115 |
AEY30C |
Germanium Tunnel Diode |
Siemens |
| 116 |
AEY30C |
Germanium tunnel diode |
Siemens |
| 117 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 118 |
AEY30D |
Germanium Tunnel Diode |
Siemens |
| 119 |
AEY30D |
Germanium Tunnel Diode |
Siemens |
| 120 |
AEY30D |
Germanium tunnel diode |
Siemens |
| | | |
