No. |
Part Name |
Description |
Manufacturer |
91 |
2N539 |
Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
92 |
2N5671 |
Trans GP BJT NPN 90V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
93 |
2N5672 |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
94 |
2N5672MP |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
95 |
2N5672S |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
96 |
2N6027 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
97 |
2N6028 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
98 |
2N6339 |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
99 |
2N6340 |
Trans GP BJT NPN 140V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
100 |
2N6340A |
Trans GP BJT NPN 140V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
101 |
2N6766 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
102 |
2N6766 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
103 |
2N6766BX5 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
New Jersey Semiconductor |
104 |
2N6962 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 30A, Parametric limits in accordance with MIL-S-19500/568 where applicable |
Siliconix |
105 |
2N6963 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A |
Siliconix |
106 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
107 |
300CNQ035 |
35V 300A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
108 |
300CNQ040 |
40V 300A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
109 |
300CNQ045 |
45V 300A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
110 |
300EXD11 |
Silicon alloy diffused junction rectifier 2500V 300A |
TOSHIBA |
111 |
300FXD11 |
Silicon alloy diffused junction rectifier 3000V 300A |
TOSHIBA |
112 |
300U100A |
1000V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
113 |
300U10A |
100V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
114 |
300U10A |
Diode Switching 100V 300A 2-Pin DO-9 |
New Jersey Semiconductor |
115 |
300U120AD |
1200V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
116 |
300U15 |
Diode Switching 1KV 300A 2-Pin DO-9 |
New Jersey Semiconductor |
117 |
300U160AD |
1600V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
118 |
300U200A |
Diode Switching 200V 300A 2-Pin DO-9 |
New Jersey Semiconductor |
119 |
300U20A |
200V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
120 |
300U20A |
Diode Switching 200V 300A 2-Pin DO-9 |
New Jersey Semiconductor |
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