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Datasheets for V120

Datasheets found :: 246
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 KM416V1204CJ-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
92 KM416V1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
93 KM416V1204CJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
94 KM416V1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
95 KM416V1204CJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
96 KM416V1204CJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
97 KM416V1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
98 KM416V1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
99 KM416V1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
100 KM416V1204CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
101 KM416V1204CT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
102 KM416V1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
103 KM416V1204CT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
104 KM416V1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
105 KM416V1204CT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
106 KM416V1204CT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
107 KM416V1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
108 KM416V1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
109 KM416V1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
110 L4931ABV120 VERY LOW DROP VOLTAGE REGULATOR WITH INHIBIT SGS Thomson Microelectronics
111 L4931ABV120 VERY LOW DROP VOLTAGE REGULATOR WITH INHIBIT ST Microelectronics
112 L4931CV120 VERY LOW DROP VOLTAGE REGULATOR WITH INHIBIT SGS Thomson Microelectronics
113 L4931CV120 VERY LOW DROP VOLTAGE REGULATOR WITH INHIBIT ST Microelectronics
114 LD1084V120 5A LOW DROP POSITIVE VOLTAGE REGULATOR ADJUSTABLE AND FIXED SGS Thomson Microelectronics
115 LD1084V120 5A LOW DROP POSITIVE VOLTAGE REGULATOR ADJUSTABLE AND FIXED ST Microelectronics
116 LD1085V120 3A LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS SGS Thomson Microelectronics
117 LD1085V120 3A LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS ST Microelectronics
118 LD1086V120 1.5V LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS SGS Thomson Microelectronics
119 LD1086V120 1.5A LOW DROP FIXED AND ADJUSTABLE POSITIVE VOLTAGE REGULATORS ST Microelectronics
120 LH28F008SCHB-V120 8MBIT (1 MB x 8)Smart Voltage Flash Memory 42pin CSP SHARP


Datasheets found :: 246
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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