| No. |
Part Name |
Description |
Manufacturer |
| 91 |
IRN150C1K0F |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
etc |
| 92 |
IRN50 |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
etc |
| 93 |
IRN50S |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
etc |
| 94 |
LM4668 |
10W High-Efficiency Mono BTL Audio Power Amplifier |
National Semiconductor |
| 95 |
LM4668LD |
10W High-Efficiency Mono BTL Audio Power Amplifier |
National Semiconductor |
| 96 |
LM4668LDBD |
10W High-Efficiency Mono BTL Audio Power Amplifier |
National Semiconductor |
| 97 |
LM4668LDX |
10W High-Efficiency Mono BTL Audio Power Amplifier |
National Semiconductor |
| 98 |
LM4668MH |
10W High-Efficiency Mono BTL Audio Power Amplifier |
National Semiconductor |
| 99 |
LM4668MHX |
10W High-Efficiency Mono BTL Audio Power Amplifier |
National Semiconductor |
| 100 |
LM4680 |
10W High-Efficiency Mono BTL Audio Power Amplifier |
National Semiconductor |
| 101 |
LM4680SD |
10W High-Efficiency Mono BTL Audio Power Amplifier |
National Semiconductor |
| 102 |
LM4680SDX |
10W High-Efficiency Mono BTL Audio Power Amplifier |
National Semiconductor |
| 103 |
MA1072-2 |
20W high power amplifier for DCS1800 |
Mitsubishi Electric Corporation |
| 104 |
MAX5982A |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 105 |
MAX5982AETE+ |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 106 |
MAX5982AETE+T |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 107 |
MAX5982AEVKIT# |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 108 |
MAX5982B |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 109 |
MAX5982BETE+ |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 110 |
MAX5982BETE+T |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 111 |
MAX5982C |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 112 |
MAX5982CETE+ |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 113 |
MAX5982CETE+T |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 114 |
MAX5982CEVKIT# |
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFET |
MAXIM - Dallas Semiconductor |
| 115 |
MCCD2004S |
350 mW High Voltage Switching Diode 240 Volts |
Micro Commercial Components |
| 116 |
MJE340 |
20.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE350 |
Continental Device India Limited |
| 117 |
ML776H10 |
InGaAsP-MQW HIGH POWER LASER DIODES |
Mitsubishi Electric Corporation |
| 118 |
ML7XX10 |
InGaAsP-MQW HIGH POWER LASER DIODES |
Mitsubishi Electric Corporation |
| 119 |
ML8XX2 SERIES |
InGaAs - MQW HIGH POWER LASER DIODES |
Mitsubishi Electric Corporation |
| 120 |
ML9XX10 |
InGaAsP-MQW HIGH POWER LASER DIODES |
Mitsubishi Electric Corporation |
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