| No. |
Part Name |
Description |
Manufacturer |
| 91 |
ERG2SJW513E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 92 |
ERG3DGW514E |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 93 |
ERG3DJW514E |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 94 |
ERG3SGW510E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 95 |
ERG3SGW511E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 96 |
ERG3SGW512E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 97 |
ERG3SGW513E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 98 |
ERG3SJW510E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 99 |
ERG3SJW511E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 100 |
ERG3SJW512E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 101 |
ERG3SJW513E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 102 |
ERQ12AJW510E |
Leaded Metal Film Fusing Resistor |
Panasonic |
| 103 |
ERQ12AJW511E |
Leaded Metal Film Fusing Resistor |
Panasonic |
| 104 |
ERQ14AJW510E |
Leaded Metal Film Fusing Resistor |
Panasonic |
| 105 |
IRFW510A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 106 |
IRFW510ATM |
100V N-Channel A-FET |
Fairchild Semiconductor |
| 107 |
IRLW510A |
Power MOSFET |
Fairchild Semiconductor |
| 108 |
IRLW510ATM |
100V N-Channel Logic Level A-FET |
Fairchild Semiconductor |
| 109 |
KT830W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 110 |
KT831W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 111 |
KT832W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 112 |
KT835W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 113 |
KT836W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 114 |
KT837W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 115 |
KT840W51 |
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 116 |
KT841W51 |
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 117 |
KT842W51 |
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 118 |
KT845W51 |
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 119 |
KT846W51 |
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 120 |
KT847W51 |
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
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