No. |
Part Name |
Description |
Manufacturer |
91 |
ISPLSI5256VE-100LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
92 |
ISPLSI5256VE-100LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
93 |
ISPLSI5256VE-100LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
94 |
ISPLSI5256VE-100LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
95 |
ISPLSI5256VE-100LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
96 |
ISPLSI5256VE-100LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
97 |
ISPLSI5256VE-100LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
98 |
ISPLSI5512VE-100LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
99 |
ISPLSI5512VE-100LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
100 |
ISPLSI5512VE-100LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
101 |
ISPLSI5512VE-100LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
102 |
ISPLSI5512VE-100LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
103 |
ISPLSI5512VE-100LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
104 |
ISPLSI5512VE-100LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
105 |
ISPLSI5512VE-100LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
106 |
KAF-1001E |
1024(H) x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification |
etc |
107 |
LF2246 |
11 x 10-bit Image Filter |
LOGIC Devices Incorporated |
108 |
LF2246QC15 |
11 x 10-bit Image Filter |
LOGIC Devices Incorporated |
109 |
LF2246QC25 |
11 x 10-bit Image Filter |
LOGIC Devices Incorporated |
110 |
LF2250 |
12 x 10-bit Matrix Multiplier |
LOGIC Devices Incorporated |
111 |
LF2250QC20 |
12 x 10-bit Matrix Multiplier |
LOGIC Devices Incorporated |
112 |
LF2250QC25 |
12 x 10-bit Matrix Multiplier |
LOGIC Devices Incorporated |
113 |
M34551E8FP |
Single-chip 4-bit CMOS microcomputer for infrared remote control transmitter. PROM 8192 words x 10 bits, RAM 280 words x 4 bits. One time PROM. |
Mitsubishi Electric Corporation |
114 |
M5M4V64S40ATP-10 |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
115 |
M5M4V64S40ATP-10L |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
116 |
M5M4V64S40ATP-8 |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
117 |
M5M4V64S40ATP-8A |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
118 |
M5M4V64S40ATP-8L |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
119 |
M66255FP |
8192 x 10-BIT LINE MEMORY (FIFO) |
Mitsubishi Electric Corporation |
120 |
MAX77387 |
Dual-Phase Adaptive DC-DC Step-Up Converter with 2x 1000mA High-Side Current Regulators |
MAXIM - Dallas Semiconductor |
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