| No. |
Part Name |
Description |
Manufacturer |
| 91 |
6RM80 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 92 |
769D (CECC 30202-013) |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX® Capacitors CECC 30202-013 Approved |
Vishay |
| 93 |
769D306X0006A0 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 94 |
769D306X0006A2 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 95 |
769D306X5006A0 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 96 |
769D306X5006A2 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 97 |
769D306X9006A0 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 98 |
769D306X9006A2 |
Wet Tantalum Capacitors with Epoxy End-Fill, Sintered Anode, TANTALEX Capacitors CECC 30202-013 Approved |
Vishay |
| 99 |
AAZ14 |
Germanium diodes quad in epoxy case for modulators and demodulators as ring circuit |
AEG-TELEFUNKEN |
| 100 |
BAV17 |
Silicon epitaxy planar diode |
ITT Industries |
| 101 |
BAV18 |
Silicon epitaxy planar diode |
ITT Industries |
| 102 |
BAV19 |
Silicon epitaxy planar diode |
ITT Industries |
| 103 |
BAV20 |
Silicon epitaxy planar diode |
ITT Industries |
| 104 |
BAV21 |
Silicon epitaxy planar diode |
ITT Industries |
| 105 |
BAW21 |
Controlled avalanche silicon epitaxy planar diode |
ITT Industries |
| 106 |
BC264 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 107 |
BC264A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 108 |
BC264B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 109 |
BC264C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 110 |
BC264D |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 111 |
BF120 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage (in german) |
ITT Semiconductors |
| 112 |
BF245 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 113 |
BF245A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 114 |
BF245B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 115 |
BF245C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 116 |
BF247 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 117 |
BF247A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 118 |
BF247B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 119 |
BF247C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 120 |
BSW72 |
PNP silicon epitaxy planar transistors with high cutoff frequency and short switching times (in german) |
ITT Semiconductors |
| | | |
