No. |
Part Name |
Description |
Manufacturer |
91 |
MAX14921 |
High-Accuracy 12-/16-Cell Measurement AFEs |
MAXIM - Dallas Semiconductor |
92 |
MAX14921ECS+ |
High-Accuracy 12-/16-Cell Measurement AFEs |
MAXIM - Dallas Semiconductor |
93 |
MAX14921ECS+T |
High-Accuracy 12-/16-Cell Measurement AFEs |
MAXIM - Dallas Semiconductor |
94 |
MAX14921ECS+TW |
High-Accuracy 12-/16-Cell Measurement AFEs |
MAXIM - Dallas Semiconductor |
95 |
MAX14921ECS+W |
High-Accuracy 12-/16-Cell Measurement AFEs |
MAXIM - Dallas Semiconductor |
96 |
MBM29PL12LM |
FLASH MEMORY 128 M (16M � 8/8M � 16) BIT |
Fujitsu Microelectronics |
97 |
MBM29PL12LM10PBT |
FLASH MEMORY 128 M (16M � 8/8M � 16) BIT |
Fujitsu Microelectronics |
98 |
MBM29PL12LM10PCN |
FLASH MEMORY 128 M (16M � 8/8M � 16) BIT |
Fujitsu Microelectronics |
99 |
MBM30LV0128 |
FLASH MEMORY 128 M (16 M x 8) BIT NAND-type |
Fujitsu Microelectronics |
100 |
MBR20120CT |
Diode Schottky 120V 20A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
101 |
MDU12H-125 |
Delay 125 +/-6.2 ns, dual, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
102 |
MDU12H-125C3 |
Delay 125 +/-6.2 ns, dual, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
103 |
MDU12H-125M |
Delay 125 +/-6.2 ns, dual, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
104 |
MDU12H-125MC3 |
Delay 125 +/-6.2 ns, dual, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
105 |
MN3850 |
Industry Standard Military 12-bit D/A Converters |
Integrated Circuit Systems |
106 |
MV1868A |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 12.0pF |
Motorola |
107 |
MV1868B |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 12.0pF |
Motorola |
108 |
MV1868D |
Silicon Epicap diode designed for electronic tuning and control applications in the UHF and lower microwave frequency 12.0pF |
Motorola |
109 |
MXD1013C_D012 |
3-in-1 silicon delay line. Output delay 12ns. |
MAXIM - Dallas Semiconductor |
110 |
MXD1013PA012 |
3-in-1 silicon delay line. Output delay 12ns. |
MAXIM - Dallas Semiconductor |
111 |
MXD1013PD012 |
3-in-1 silicon delay line. Output delay 12ns. |
MAXIM - Dallas Semiconductor |
112 |
MXD1013SA012 |
3-in-1 silicon delay line. Output delay 12ns. |
MAXIM - Dallas Semiconductor |
113 |
MXD1013SE012 |
3-in-1 silicon delay line. Output delay 12ns. |
MAXIM - Dallas Semiconductor |
114 |
MXD1013UA012 |
3-in-1 silicon delay line. Output delay 12ns. |
MAXIM - Dallas Semiconductor |
115 |
P80C31 |
80C51 8-bit microcontroller family 128/256 byte RAM ROMless low voltage (2.7 V-5.5 V), low power, high speed (33 MHz) |
Philips |
116 |
P80C31SBAA |
80C51 8-bit microcontroller family 128/256 byte RAM ROMless low voltage (2.7 V-5.5 V), low power, high speed (33 MHz) |
NXP Semiconductors |
117 |
P80C31SBPN |
80C51 8-bit microcontroller family 128/256 byte RAM ROMless low voltage (2.7 V-5.5 V), low power, high speed (33 MHz) |
NXP Semiconductors |
118 |
P80C31SFAA |
80C51 8-bit microcontroller family 128/256 byte RAM ROMless low voltage (2.7 V-5.5 V), low power, high speed (33 MHz) |
NXP Semiconductors |
119 |
P80C32 |
80C51 8-bit microcontroller family 128/256 byte RAM ROMless low voltage (2.7 V-5.5 V), low power, high speed (33 MHz) |
Philips |
120 |
P80C32SBAA |
80C51 8-bit microcontroller family 128/256 byte RAM ROMless low voltage (2.7 V-5.5 V), low power, high speed (33 MHz) |
NXP Semiconductors |
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