No. |
Part Name |
Description |
Manufacturer |
91 |
MEA75-12 |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
92 |
MEA75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
93 |
MEE250-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
94 |
MEE300-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
95 |
MEE75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
96 |
MEK150-04DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
97 |
MEK250-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
98 |
MEK300-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
99 |
MEK350-02DA |
200V fast recovery epitaxial diode (FRED) module |
IXYS |
100 |
MEK75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
101 |
MEO450-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
102 |
MEO500-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
103 |
MEO550-02DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
104 |
MZC400TS60U |
Fast Recovery Epitazial Diode INT-A-PAK |
etc |
105 |
MZK400TS60U |
Fast Recovery Epitazial Diode INT-A-PAK |
etc |
106 |
Q62702-B70 |
Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
Siemens |
107 |
RUR-D1610 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 100V. |
General Electric Solid State |
108 |
RUR-D1615 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 150V. |
General Electric Solid State |
109 |
RUR-D1620 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 200V. |
General Electric Solid State |
110 |
RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V. |
General Electric Solid State |
111 |
RUR-D815 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 150 V. |
General Electric Solid State |
112 |
RUR-D820 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 200 V. |
General Electric Solid State |
113 |
SML1012A258R |
FAST RECOVERY EPITAXIAL DIODE IN A HERMETIC TO-258 METAL PACKAGE |
SemeLAB |
114 |
SML3010T254 |
FAST RECOVERY EPITAXIAL DIODE IN A HERMETIC TO-254 METAL PACKAGE |
SemeLAB |
115 |
TC83230-0004 |
Single-Chip CMOS LSI for Calculators with Printers (applicable printer heads: M-72T manufactured by EPSON) |
TOSHIBA |
116 |
TC83230-0011 |
Single-Chip CMOS LSI for Calculators with Printers��(applicable printer heads: M-31 manufactured by EPSON) |
TOSHIBA |
117 |
TC83230-0012 |
Single-Chip CMOS LSI for Calculators with Printers (applicable printer heads: M-80, M-400A, M-400E, M-401A manufactured by EPSON) |
TOSHIBA |
118 |
TC83230-0015 |
Single-Chip CMOS LSI for Calculators with Printers (applicable printer heads: M31/M31A manufactured by EPSON) |
TOSHIBA |
119 |
TC83230-0021 |
Single-Chip CMOS LSI for Calculators with Printers (applicable printer heads: M-42V/42TV/41TAV/48T manufactured by EPSON) |
TOSHIBA |
120 |
TC83230-0022 |
Single-Chip CMOS LSI for Calculators with Printers (applicable printer heads: M31T, M32T manufactured by EPSON) |
TOSHIBA |
| | | |