| No. |
Part Name |
Description |
Manufacturer |
| 91 |
17P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 92 |
18P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 93 |
19P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 94 |
1N91 |
Germanium rectifier, extremely low forward voltage drop |
Motorola |
| 95 |
1N92 |
Germanium rectifier, extremely low forward voltage drop |
Motorola |
| 96 |
1N93 |
Germanium rectifier, extremely low forward voltage drop |
Motorola |
| 97 |
23J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 98 |
23J2C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 99 |
24J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 100 |
24J2C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 101 |
25J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 102 |
25J2C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 103 |
26J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 104 |
26J2C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 105 |
27J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 106 |
28J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 107 |
28J2C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 108 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 109 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 110 |
2SA1182 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 111 |
2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 112 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 113 |
2SA1588 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 114 |
2SA1963 |
PNP Epitaxial Planar Silicon Transistor High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications |
SANYO |
| 115 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 116 |
2SA9015 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 117 |
2SA929 |
VERY LOW NOISE AMP APPLICATIONS |
SANYO |
| 118 |
2SA930 |
VERY LOW NOISE AMP APPLICATIONS |
SANYO |
| 119 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 120 |
2SB257 |
Low Frequency Low-Noise Transistor |
TOSHIBA |
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