No. |
Part Name |
Description |
Manufacturer |
91 |
17P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
92 |
18P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
93 |
19P2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
94 |
1N91 |
Germanium rectifier, extremely low forward voltage drop |
Motorola |
95 |
1N92 |
Germanium rectifier, extremely low forward voltage drop |
Motorola |
96 |
1N93 |
Germanium rectifier, extremely low forward voltage drop |
Motorola |
97 |
23J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
98 |
23J2C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
99 |
24J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
100 |
24J2C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
101 |
25J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
102 |
25J2C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
103 |
26J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
104 |
26J2C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
105 |
27J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
106 |
28J2 |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
107 |
28J2C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
108 |
2SA1182 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
109 |
2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
110 |
2SA1313 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
111 |
2SA1588 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
112 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
113 |
2SA9015 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
114 |
2SA929 |
VERY LOW NOISE AMP APPLICATIONS |
SANYO |
115 |
2SA930 |
VERY LOW NOISE AMP APPLICATIONS |
SANYO |
116 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
117 |
2SB73 |
Germanium Transistor PNP Alloyed Junction Audio Frequency Low Noise Amplifier |
Hitachi Semiconductor |
118 |
2SC1199 |
Silicon NPN epitaxial planar high frequency low noise transistor |
TOSHIBA |
119 |
2SC1222 |
Transistors LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
120 |
2SC1335 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
Unknow |
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