| No. |
Part Name |
Description |
Manufacturer |
| 91 |
GS882Z18BD-250I |
250MHz 5.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 92 |
GS882Z36AB-250 |
250MHz 5.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 93 |
GS882Z36AB-250I |
250MHz 5.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 94 |
GS882Z36AD-250 |
250MHz 5.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 95 |
GS882Z36AD-250I |
250MHz 5.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 96 |
GS882Z36BB-250 |
250MHz 5.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 97 |
GS882Z36BB-250I |
250MHz 5.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 98 |
GS882Z36BD-250I |
250MHz 5.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 99 |
M68765 |
RF POWER MODULE 135-175 MHz 5.5W FM PORTABLE |
Mitsubishi Electric Corporation |
| 100 |
MMBZ5231B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.1 V. Test current 20.0 mA. |
Chenyi Electronics |
| 101 |
MMBZ5232B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.6 V. Test current 20.0 mA. |
Chenyi Electronics |
| 102 |
MWA110 |
RF Amp Chip Single GP 400MHz 5.5V 3-Pin TO-39 |
New Jersey Semiconductor |
| 103 |
MWA120 |
RF Amp Chip Single GP 400MHz 5.5V 3-Pin TO-39 |
New Jersey Semiconductor |
| 104 |
MWA130 |
RF Amp Chip Single GP 400MHz 5.5V 3-Pin TO-39 |
New Jersey Semiconductor |
| 105 |
SD1835 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 106 |
TCC3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
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