| No. |
Part Name |
Description |
Manufacturer |
| 9151 |
AQW414EHA |
PhotoMOS relay, GU (general use)-E type 2-channel (form B) type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
| 9152 |
AQW414EHAX |
PhotoMOS relay, GU (general use)-E type 2-channel (form B) type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal. Picked from the 1/2/3/4-pin side. |
Matsushita Electric Works(Nais) |
| 9153 |
AQW414EHAZ |
PhotoMOS relay, GU (general use)-E type 2-channel (form B) type. AC/DC type. I/O isolation voltage 5,000V. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal. Picked from the 5/6/7/8-pin side. |
Matsushita Electric Works(Nais) |
| 9154 |
AQY221N2VW |
PhotoMOS relay, RF (radio frequency). C x R 10 type. 1 form A. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 9155 |
AQY221N2VY |
PhotoMOS relay, RF (radio frequency). C x R 10 type. 1 form A. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 9156 |
AQY221R2SX |
PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA. |
Matsushita Electric Works(Nais) |
| 9157 |
AQY221R2SZ |
PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA. |
Matsushita Electric Works(Nais) |
| 9158 |
AQY414SX |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 400 V, load current 100 mA. |
Matsushita Electric Works(Nais) |
| 9159 |
AQY414SZ |
PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 400 V, load current 100 mA. |
Matsushita Electric Works(Nais) |
| 9160 |
AQZ105 |
Power photoMOS relay, 1-channel (form A). DC type. Output rating: load voltage 100 V, load current 2.6 A. |
Matsushita Electric Works(Nais) |
| 9161 |
AQZ105D |
Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 100 V, load current 2.3 A. |
Matsushita Electric Works(Nais) |
| 9162 |
AQZ205 |
Power photoMOS relay, 1-channel (form A). AC/DC type. Output rating: load voltage 100 V, load current 2.0 A. |
Matsushita Electric Works(Nais) |
| 9163 |
AQZ205D |
Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 100 V, load current 1.8 A. |
Matsushita Electric Works(Nais) |
| 9164 |
AR1109S44 |
4400 V, 1000 A, 10.3 kA rectifier diode |
POSEICO SPA |
| 9165 |
AR1109S44 |
4400 V, 1000 A, 10.3 kA rectifier diode |
POSEICO SPA |
| 9166 |
AR904S29 |
2900 V, 1230 A, 10.1 kA rectifier diode |
POSEICO SPA |
| 9167 |
ARF463A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 125V 100W 100MHz |
Advanced Power Technology |
| 9168 |
ARF463A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 125V 100W 100MHz |
Advanced Power Technology |
| 9169 |
ARF463B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 125V 100W 100MHz |
Advanced Power Technology |
| 9170 |
ARF463B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 125V 100W 100MHz |
Advanced Power Technology |
| 9171 |
ARF464A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 65V 100W 100MHz |
Advanced Power Technology |
| 9172 |
ARF464A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 65V 100W 100MHz |
Advanced Power Technology |
| 9173 |
ARF464B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 65V 100W 100MHz |
Advanced Power Technology |
| 9174 |
ARF464B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 65V 100W 100MHz |
Advanced Power Technology |
| 9175 |
AS01A |
Fast-Recovery Rectifier Diodes (600 to 1000V) |
Sanken |
| 9176 |
AS7C1025A-10JC |
5V 128K x 8 CM0S SRAM (revolutionary pinout), 10ns access time |
Alliance Semiconductor |
| 9177 |
AS7C1025A-10JI |
5V 128K x 8 CM0S SRAM (revolutionary pinout), 10ns access time |
Alliance Semiconductor |
| 9178 |
AS7C1025A-10TC |
5V 128K x 8 CM0S SRAM (revolutionary pinout), 10ns access time |
Alliance Semiconductor |
| 9179 |
AS7C1025A-10TI |
5V 128K x 8 CM0S SRAM (revolutionary pinout), 10ns access time |
Alliance Semiconductor |
| 9180 |
AS7C1025A-10TJC |
5V 128K x 8 CM0S SRAM (revolutionary pinout), 10ns access time |
Alliance Semiconductor |
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