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Datasheets for TEMP

Datasheets found :: 9236
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No. Part Name Description Manufacturer
9151 VRE122M Precision high temperature reference supply THALER CORPORATION
9152 VRE122MA Precision high temperature reference supply THALER CORPORATION
9153 VRE125C Precision high temperature reference supply THALER CORPORATION
9154 VRE125CA Precision high temperature reference supply THALER CORPORATION
9155 VRE125M Precision high temperature reference supply THALER CORPORATION
9156 VRE125MA Precision high temperature reference supply THALER CORPORATION
9157 VRE127C Precision high temperature reference supply THALER CORPORATION
9158 VRE127CA Precision high temperature reference supply THALER CORPORATION
9159 VRE127M Precision high temperature reference supply THALER CORPORATION
9160 VRE127MA Precision high temperature reference supply THALER CORPORATION
9161 VT1697SB Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
9162 VT1697SBFQ Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
9163 VT1697SBFQ+CNR Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
9164 VT1697SBFQ-008 Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
9165 VT1697SBFQR Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
9166 VT1697SBFQR-008 Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
9167 VT1697SBFQX Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
9168 VT1697SBFQX+CN9 Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
9169 VT1697SBFQX+CNR Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
9170 VT1697SBFQX-008 Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
9171 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9172 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9173 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9174 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9175 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9176 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9177 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9178 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9179 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9180 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 9236
Page: | 302 | 303 | 304 | 305 | 306 | 307 | 308 |



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