No. |
Part Name |
Description |
Manufacturer |
9151 |
VRE122M |
Precision high temperature reference supply |
THALER CORPORATION |
9152 |
VRE122MA |
Precision high temperature reference supply |
THALER CORPORATION |
9153 |
VRE125C |
Precision high temperature reference supply |
THALER CORPORATION |
9154 |
VRE125CA |
Precision high temperature reference supply |
THALER CORPORATION |
9155 |
VRE125M |
Precision high temperature reference supply |
THALER CORPORATION |
9156 |
VRE125MA |
Precision high temperature reference supply |
THALER CORPORATION |
9157 |
VRE127C |
Precision high temperature reference supply |
THALER CORPORATION |
9158 |
VRE127CA |
Precision high temperature reference supply |
THALER CORPORATION |
9159 |
VRE127M |
Precision high temperature reference supply |
THALER CORPORATION |
9160 |
VRE127MA |
Precision high temperature reference supply |
THALER CORPORATION |
9161 |
VT1697SB |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
9162 |
VT1697SBFQ |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
9163 |
VT1697SBFQ+CNR |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
9164 |
VT1697SBFQ-008 |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
9165 |
VT1697SBFQR |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
9166 |
VT1697SBFQR-008 |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
9167 |
VT1697SBFQX |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
9168 |
VT1697SBFQX+CN9 |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
9169 |
VT1697SBFQX+CNR |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
9170 |
VT1697SBFQX-008 |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
9171 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9172 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9173 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9174 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9175 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9176 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9177 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9178 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9179 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
9180 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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