| No. |
Part Name |
Description |
Manufacturer |
| 9151 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 9152 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 9153 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 9154 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 9155 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 9156 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 9157 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 9158 |
BF166 |
Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier |
SGS-ATES |
| 9159 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 9160 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 9161 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 9162 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 9163 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 9164 |
BF509 |
Epitaxial planar PNP transistor, intended for use as controlled VHF preamplifier |
SGS-ATES |
| 9165 |
BF509S |
Epitaxial planar PNP transistor, intended for use as controlled VHF AGC preamplifier |
SGS-ATES |
| 9166 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
| 9167 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 9168 |
BFX62 |
NPN transistor for controllable amplifiers and oscillator stages up to 1HGz |
Siemens |
| 9169 |
BFY65 |
Silicon NPN Planar Transistor with high blocking voltage, especially for controlling number display tubes |
TELEFUNKEN |
| 9170 |
BG 3230 |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
| 9171 |
BG 3230R |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
| 9172 |
BGU7063 |
Analog controlled high linearity low noise variable gain amplifier |
NXP Semiconductors |
| 9173 |
BH3852 |
Sound control IC |
ROHM |
| 9174 |
BH3852FS |
Sound control IC |
ROHM |
| 9175 |
BH3852S |
Sound control IC |
ROHM |
| 9176 |
BH3854AFS |
Serial sound control IC |
ROHM |
| 9177 |
BH3854AS |
Serial sound control IC |
ROHM |
| 9178 |
BH3856 |
2-wire serial sound control IC |
ROHM |
| 9179 |
BH3856FS |
2-wire serial sound control IC |
ROHM |
| 9180 |
BH3856S |
2-wire serial sound control IC |
ROHM |
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