| No. |
Part Name |
Description |
Manufacturer |
| 9181 |
1S2461 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 9182 |
1S2462 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 9183 |
1S2576 |
Silicon diffused junction rectifier 1A 100V |
TOSHIBA |
| 9184 |
1S2577 |
Silicon diffused junction rectifier 1A 200V |
TOSHIBA |
| 9185 |
1S2578 |
Silicon diffused junction rectifier 1A 400V |
TOSHIBA |
| 9186 |
1S2579 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 9187 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
| 9188 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
| 9189 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 9190 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 9191 |
1S2584 |
Silicon diffused junction rectifier 3A 400V |
TOSHIBA |
| 9192 |
1S2585 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
| 9193 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
| 9194 |
1S2615 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 9195 |
1S2616 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 9196 |
1S2617 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 9197 |
1S290 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 9198 |
1S290R |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 9199 |
1S3 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 9200 |
1S3 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 9201 |
1S30 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 9202 |
1S30 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 9203 |
1S30 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 9204 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9205 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9206 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9207 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9208 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9209 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9210 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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