| No. |
Part Name |
Description |
Manufacturer |
| 9211 |
1S2462 |
GENERAL PURPOSE RECTIFIER APPLICATIONS. |
TOSHIBA |
| 9212 |
1S2576 |
Silicon diffused junction rectifier 1A 100V |
TOSHIBA |
| 9213 |
1S2577 |
Silicon diffused junction rectifier 1A 200V |
TOSHIBA |
| 9214 |
1S2578 |
Silicon diffused junction rectifier 1A 400V |
TOSHIBA |
| 9215 |
1S2579 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 9216 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
| 9217 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
| 9218 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 9219 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 9220 |
1S2584 |
Silicon diffused junction rectifier 3A 400V |
TOSHIBA |
| 9221 |
1S2585 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
| 9222 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
| 9223 |
1S2615 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 9224 |
1S2616 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 9225 |
1S2617 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 9226 |
1S290 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 9227 |
1S290R |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 9228 |
1S3 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 9229 |
1S3 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 9230 |
1S30 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 9231 |
1S30 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 9232 |
1S30 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 9233 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9234 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9235 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9236 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9237 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9238 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9239 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9240 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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