No. |
Part Name |
Description |
Manufacturer |
9301 |
BD181 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
9302 |
BD182 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
9303 |
BD183 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
9304 |
BD202 |
Silicon Complementary Transistors General Purpose Amplifier, Switch |
NTE Electronics |
9305 |
BD215 |
Silicon MESA NPN transistor, High voltage AF Power amplifier |
SGS-ATES |
9306 |
BD216 |
Silicon MESA NPN transistor, high voltage AF power amplifier |
SGS-ATES |
9307 |
BD233 |
NPN power transistor Homobase - LF amplifier and switching |
SESCOSEM |
9308 |
BD234 |
PNP power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
9309 |
BD235 |
NPN power transistor Homobase - LF amplifier and switching |
SESCOSEM |
9310 |
BD236 |
PNP power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
9311 |
BD237 |
NPN power transistor Homobase - LF amplifier and switching |
SESCOSEM |
9312 |
BD238 |
PNP power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
9313 |
BD241 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242 |
SESCOSEM |
9314 |
BD241A |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242A |
SESCOSEM |
9315 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
9316 |
BD241B |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242B |
SESCOSEM |
9317 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
9318 |
BD241C |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242C |
SESCOSEM |
9319 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
9320 |
BD242 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD241 |
SESCOSEM |
9321 |
BD242A |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD241A |
SESCOSEM |
9322 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
9323 |
BD242B |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD242B |
SESCOSEM |
9324 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
9325 |
BD242C |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD242C |
SESCOSEM |
9326 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
9327 |
BD243A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
9328 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
9329 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
9330 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
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