| No. |
Part Name |
Description |
Manufacturer |
| 931 |
PTVS5V0Z1USK |
Transient voltage suppressor in DSN1608-2 for mobile applications |
Nexperia |
| 932 |
PTVS5V0Z1USKN |
Transient voltage suppressor in DSN1608-2 for mobile applications |
Nexperia |
| 933 |
PTVS5V0Z1USKP |
Transient voltage suppressor in DSN1608-2 for mobile applications |
Nexperia |
| 934 |
PTVS7V5Z1USK |
Transient voltage suppressor in DSN1608-2 for mobile applications |
Nexperia |
| 935 |
Q-62702-G66 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
Siemens |
| 936 |
Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
| 937 |
Q62702-A1189 |
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply |
Siemens |
| 938 |
Q62702-F1296 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 939 |
Q62702-F1298 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 940 |
Q62702-F1377 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 941 |
Q62702-F1378 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 942 |
Q62702-F1490 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 943 |
Q62702-F1494 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems |
Siemens |
| 944 |
Q62702-F1500 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 945 |
Q62702-F1504 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 946 |
Q62702-F1531 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 947 |
Q62702-G0071 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 948 |
Q62702-G44 |
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) |
Siemens |
| 949 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 950 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 951 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| 952 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 953 |
Q62702-M9 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) |
Siemens |
| 954 |
Q62702G-39 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
Siemens |
| 955 |
RA07H4047M |
400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
Mitsubishi Electric Corporation |
| 956 |
RA07H4047M-01 |
400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
Mitsubishi Electric Corporation |
| 957 |
RA07H4047M-E01 |
400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
Mitsubishi Electric Corporation |
| 958 |
RA13H4047M |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 959 |
RA13H4047M-01 |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 960 |
RA13H4047M-E01 |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
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