| No. |
Part Name |
Description |
Manufacturer |
| 931 |
273.250 |
Axial Lead and Cartridge Fuses |
Littelfuse |
| 932 |
274.250 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/4. Nominal resistance cold 1.75 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 933 |
278.250 |
Axial Lead and Cartridge Fuses |
Littelfuse |
| 934 |
279.250 |
Axial Lead and Cartridge Fuses |
Littelfuse |
| 935 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
| 936 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
| 937 |
27C256Q250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
| 938 |
27C256Q250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
| 939 |
285D126X0250G5 |
TYPE 285D Foil Tantalum Replacement |
Vishay |
| 940 |
285D405X0250G3 |
TYPE 285D Foil Tantalum Replacement |
Vishay |
| 941 |
285D805X0250G4 |
TYPE 285D Foil Tantalum Replacement |
Vishay |
| 942 |
28C256AJC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 943 |
28C256AJC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 944 |
28C256AJI-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 945 |
28C256AJI-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 946 |
28C256AJM-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 947 |
28C256AJM-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 948 |
28C256APC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 949 |
28C256APC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 950 |
28C256API-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 951 |
28C256API-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 952 |
28C256APM-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 953 |
28C256APM-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 954 |
28C256ASC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 955 |
28C256ASC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 956 |
28C256ASI-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 957 |
28C256ASI-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 958 |
28C256ASM-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 959 |
28C256ASM-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 960 |
28C256ATC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
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