No. |
Part Name |
Description |
Manufacturer |
931 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
932 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
933 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
934 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
935 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
936 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
937 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
938 |
2N6394 |
12A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
939 |
2N6395 |
12A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
940 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
941 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
942 |
2N6398 |
12A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
943 |
2N6400 |
16A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
944 |
2N6401 |
16A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
945 |
2N6402 |
16A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
946 |
2N6403 |
16A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
947 |
2N6404 |
16A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
948 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
949 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
950 |
2N6422 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
951 |
2N6423 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
952 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
953 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
954 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
955 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
956 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
957 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
958 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
959 |
2N6477 |
MEDIUM POWER SILICON NPN TRANSISTORS |
General Electric Solid State |
960 |
2N6478 |
MEDIUM POWER SILICON NPN TRANSISTORS |
General Electric Solid State |
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