| No. |
Part Name |
Description |
Manufacturer |
| 931 |
Q62702-C2326 |
PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
Siemens |
| 932 |
Q62702-C2327 |
PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
Siemens |
| 933 |
Q62702-C2328 |
PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
Siemens |
| 934 |
Q62702-C2329 |
PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
Siemens |
| 935 |
Q62702-C2330 |
PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
Siemens |
| 936 |
Q62702-C25 |
NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
Siemens |
| 937 |
Q62702-C26 |
PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
Siemens |
| 938 |
Q62702-F1042 |
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) |
Siemens |
| 939 |
Q62702-S534 |
PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage) |
Siemens |
| 940 |
Q62702G63 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| 941 |
RF133 |
RF/IF Transceiver For GSM Applications |
Conexant |
| 942 |
RF137 |
Transceiver For GSM Applications |
Conexant |
| 943 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 944 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 945 |
RF210A |
Dual-Band, Image-Reject Downconverters For GSM Applications |
Conexant |
| 946 |
RF210B |
Dual-Band, Image-Reject Downconverters For GSM Applications |
Conexant |
| 947 |
S0802BH |
I(t): 8A; V(drm): 200V; sensitive gate SCR. For general purpose applications |
SGS Thomson Microelectronics |
| 948 |
S0802DH |
I(t): 8A; V(drm): 400V; sensitive gate SCR. For general purpose applications |
SGS Thomson Microelectronics |
| 949 |
S0802MH |
I(t): 8A; V(drm): 600V; sensitive gate SCR. For general purpose applications |
SGS Thomson Microelectronics |
| 950 |
S0802NH |
I(t): 8A; V(drm): 800V; sensitive gate SCR. For general purpose applications |
SGS Thomson Microelectronics |
| 951 |
S3C3410X |
High Performance 16-bit MCU for Genenral Purpose |
Samsung Electronic |
| 952 |
S3C3410X |
High Performance 16-bit MCU for Genenral Purpose |
Samsung Electronic |
| 953 |
S3C3410X |
High Performance 16-bit MCU for Genenral Purpose |
Samsung Electronic |
| 954 |
S3C3410X |
High Performance 16-bit MCU for Genenral Purpose |
Samsung Electronic |
| 955 |
S3C3410X(KS17C40100) |
High Performance 16-bit MCU for Genenral Purpose User's Manual |
Samsung Electronic |
| 956 |
S3C3410X(KS17C40100) |
High Performance 16-bit MCU for Genenral Purpose Application Note |
Samsung Electronic |
| 957 |
SC3010 |
Infrared remote control transmitter for general purpose infrared applications |
Silan Semiconductors |
| 958 |
SC3010S |
Infrared remote control transmitter for general purpose infrared applications |
Silan Semiconductors |
| 959 |
SD101A |
Silicon Schottky Barrier Diodes for general purpose applications |
Semtech |
| 960 |
SD101B |
Silicon Schottky Barrier Diodes for general purpose applications |
Semtech |
| | | |
