| No. |
Part Name |
Description |
Manufacturer |
| 931 |
ATF-531P8-BLK |
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package |
Agilent (Hewlett-Packard) |
| 932 |
ATF-531P8-TR1 |
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package |
Agilent (Hewlett-Packard) |
| 933 |
ATF-531P8-TR2 |
High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package |
Agilent (Hewlett-Packard) |
| 934 |
ATF501P8 |
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
Agilent (Hewlett-Packard) |
| 935 |
ATR0785 |
High linearity active transmit mixer for 800-1000 MHz |
Atmel |
| 936 |
ATR0786 |
High linearity active transmit mixer for 1800-2100 MHz |
Atmel |
| 937 |
ATR0787 |
High linearity active transmit mixer for 2100-2500 MHz |
Atmel |
| 938 |
AV16899DGG |
2.5V/3.3V 18-bit latched transceiver with 16-bit parity generator/checker 3-State |
Philips |
| 939 |
AV16899DL |
2.5V/3.3V 18-bit latched transceiver with 16-bit parity generator/checker 3-State |
Philips |
| 940 |
AWL6152 |
The ANADIGICS AWL6152 WLAN Power Amplifier is an easy to use module that delivers high level of linearity and efficiency for high ... |
Anadigics Inc |
| 941 |
AWL6153 |
The ANADIGICS AWL6153 WLAN Power Amplifier is an easy to use module that delivers high level of linearity and efficiency for high ... |
Anadigics Inc |
| 942 |
AWT6134 |
The AWT6134 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. |
Anadigics Inc |
| 943 |
AWT6135 |
The AWT6135 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. |
Anadigics Inc |
| 944 |
AWT6301 |
The AWT6301 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by ... |
Anadigics Inc |
| 945 |
AWT6302 |
The AWT6302 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by ... |
Anadigics Inc |
| 946 |
B1100_B |
100V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 947 |
B170_B |
70V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 948 |
B180_B |
80V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 949 |
B190_B |
90V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 950 |
B772 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 951 |
BBY55-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 952 |
BBY55-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 953 |
BBY56-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 954 |
BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 955 |
BBY57-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) |
Siemens |
| 956 |
BBY57-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 957 |
BBY58-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 958 |
BBY58-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 959 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
| 960 |
BC477 |
ft min 100 MHz hfe min 50 Transistor polarity PNP Current Ic continuous max 0.15 A Voltage Vcbo 90 V Voltage Vceo 80 V Current Ic (hfe) 2 mA Power Ptot 360 mW |
SGS Thomson Microelectronics |
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