| No. |
Part Name |
Description |
Manufacturer |
| 931 |
MPSD04 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 932 |
MPSD54 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 933 |
MQ3725 |
Quad NPN silicon annular transistor designed where space reduction is required, TO-86 case |
Motorola |
| 934 |
MQ3762 |
Quad PNP silicon annular transistor designed where space reduction is required, case TO-86 |
Motorola |
| 935 |
MRD300 |
NPN silicon high sensitivity photo transistor designed for application in industrial inspection, processing and control, counters, sorters |
Motorola |
| 936 |
MRFC8003 |
Silicon RF Transistor Dice |
Motorola |
| 937 |
MRFC8004 |
Silicon RF Transistor Dice |
Motorola |
| 938 |
MSC1002M |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 939 |
MSC1002MP |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 940 |
MSC4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 941 |
MSC4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 942 |
MSC80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
| 943 |
MSC81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 944 |
MSC81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 945 |
MSC81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 946 |
MSC81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
| 947 |
MSC81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 948 |
MSC81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 949 |
MSC81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 950 |
MSC81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 951 |
MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 952 |
MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 953 |
MTD10N10EL-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 954 |
MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 955 |
MTD1N80E |
Power Field Effect Transistor DPAK for Surface Mount |
ON Semiconductor |
| 956 |
MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 957 |
MTD20N06V-D |
TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 958 |
MTD2955E |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount |
ON Semiconductor |
| 959 |
MTD2955E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 960 |
MTD2955ET4 |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount |
ON Semiconductor |
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