| No. |
Part Name |
Description |
Manufacturer |
| 931 |
ER5B1 |
3 AMP ENCAPSULATED ASSEMBLIES |
Microsemi |
| 932 |
ER6B1 |
3 AMP ENCAPSULATED ASSEMBLIES |
Microsemi |
| 933 |
ER7B1 |
3 AMP ENCAPSULATED ASSEMBLIES |
Microsemi |
| 934 |
ER8B1 |
3 AMP ENCAPSULATED ASSEMBLIES |
Microsemi |
| 935 |
ER9B1 |
3 AMP ENCAPSULATED ASSEMBLIES |
Microsemi |
| 936 |
F1710-1000 TO 1901 |
Class Y2, AC250V, Insulated Leads |
Vishay |
| 937 |
F1724-4000 TO 4901 |
Class X1, AC440V, Insulated Leads |
Vishay |
| 938 |
F1724-4200 TO 4264 |
Class X1, AC440V, Insulated Leads |
Vishay |
| 939 |
F1774-2000 TO 2400 |
Class X2, AC275V, Insulated Leads |
Vishay |
| 940 |
F1774-2200 TO 2264 |
Class X2, AC275V, Insulated Leads |
Vishay |
| 941 |
F1774-3000 TO 3400 |
Class X2, AC300V, Insulated Leads |
Vishay |
| 942 |
F1774-3200 TO 3264 |
Class X2, AC300V, Insulated Leads |
Vishay |
| 943 |
F1774-4000 TO 4400 |
Class X2, AC440V, Insulated Leads |
Vishay |
| 944 |
F1774-4200 TO 4264 |
Class X2, AC440V, Insulated Leads |
Vishay |
| 945 |
F1779 |
Class X2, AC275V, Insulated Leads |
Vishay |
| 946 |
FAN8800 |
V(cc): 36V; single IGBT gate driver. For single insulated gate bipolar TR, single MOSFET |
Fairchild Semiconductor |
| 947 |
FGD3N60LSD_F085 |
Insulated Gate Bipolar Transistor (IGBT) |
Fairchild Semiconductor |
| 948 |
FMMT449 |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 949 |
FMMT491 |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 950 |
FMMT493 |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 951 |
FMMT591 |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 952 |
FMMT593 |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 953 |
FMMT619 |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 954 |
GN2470 |
INSULATED GATE BIPOLAR TRANSISTOR |
Supertex Inc |
| 955 |
GN2470K4 |
INSULATED GATE BIPOLAR TRANSISTOR |
Supertex Inc |
| 956 |
GT10J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 957 |
GT10J303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 958 |
GT10J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 959 |
GT10J312 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 960 |
GT10J312(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| | | |
