| No. |
Part Name |
Description |
Manufacturer |
| 931 |
NTE596 |
Silicon Diode, Dual, Common Anode, High Speed |
NTE Electronics |
| 932 |
NTE5962 |
Silicon Power Rectifier Diode, 25 Amp |
NTE Electronics |
| 933 |
NTE5963 |
Silicon Power Rectifier Diode, 25 Amp |
NTE Electronics |
| 934 |
NTE5966 |
Silicon Power Rectifier Diode, 25 Amp |
NTE Electronics |
| 935 |
NTE5967 |
Silicon Power Rectifier Diode, 25 Amp |
NTE Electronics |
| 936 |
NTE597 |
Silicon Rectifier Ultra Fast, 200V, 8A |
NTE Electronics |
| 937 |
NTE598 |
Silicon Rectifier Ultra Fast, 600V, 8A |
NTE Electronics |
| 938 |
NTE5980 |
Silicon Power Rectifier Diode, 40 Amp |
NTE Electronics |
| 939 |
NTE5981 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 40A. |
NTE Electronics |
| 940 |
NTE5982 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A. |
NTE Electronics |
| 941 |
NTE5983 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A. |
NTE Electronics |
| 942 |
NTE5986 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 40A. |
NTE Electronics |
| 943 |
NTE5987 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 40A. |
NTE Electronics |
| 944 |
NTE5988 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A. |
NTE Electronics |
| 945 |
NTE5989 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A. |
NTE Electronics |
| 946 |
NTE599 |
Silicon Rectifier Ultra Fast, 200V, 15A |
NTE Electronics |
| 947 |
NTE5990 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. |
NTE Electronics |
| 948 |
NTE5991 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. |
NTE Electronics |
| 949 |
NTE5992 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 40A. |
NTE Electronics |
| 950 |
NTE5993 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 40A. |
NTE Electronics |
| 951 |
NTE5994 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 40A. |
NTE Electronics |
| 952 |
NTE5995 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 40A. |
NTE Electronics |
| 953 |
NTE5998 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A. |
NTE Electronics |
| 954 |
NTE5999 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A. |
NTE Electronics |
| 955 |
RTE55 |
Wirewound Rheostat/Potentiometer |
Vishay |
| 956 |
STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE |
ST Microelectronics |
| 957 |
STE53NA50 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 958 |
STE53NA50 |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
ST Microelectronics |
| 959 |
STE53NC50 |
N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET |
ST Microelectronics |
| 960 |
STE5588CVB |
STe5588 |
ST Microelectronics |
| | | |
