| No. |
Part Name |
Description |
Manufacturer |
| 9331 |
1SS353 |
Silicon Epitaxial Planar High-Speed Switching Diodes |
ROHM |
| 9332 |
1SS354 |
Silicon Epitaxial Planar High-Speed Switching Diodes |
ROHM |
| 9333 |
1SS357 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 9334 |
1SS360 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 9335 |
1SS360F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 9336 |
1SS361 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 9337 |
1SS361F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 9338 |
1SS362 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 9339 |
1SS367 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 9340 |
1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage, High Speed Switching Applications |
TOSHIBA |
| 9341 |
1SS371 |
Silicon epitaxial planar type diode for VHF tuner band switch applications, marking TY |
TOSHIBA |
| 9342 |
1SS372 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 9343 |
1SS374 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 9344 |
1SS377 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 9345 |
1SS378 |
Diode Silicon Epitaxial Planar Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 9346 |
1SS379 |
Diode Silicon Epitaxial Planar Type General Purpose Rectifier Applications |
TOSHIBA |
| 9347 |
1SS381 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 9348 |
1SS382 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 9349 |
1SS383 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 9350 |
1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 9351 |
1SS385 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 9352 |
1SS385F |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching |
TOSHIBA |
| 9353 |
1SS387 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 9354 |
1SS388 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 9355 |
1SS389 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 9356 |
1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 9357 |
1SS392 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 9358 |
1SS393 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 9359 |
1SS394 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 9360 |
1SS395 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
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