No. |
Part Name |
Description |
Manufacturer |
9331 |
TC530 |
The TC530/534 are serial analog data acquisition subsystems ideal for high precision measurements (up to 17bits plus sign). The TC530 consists of a dual slope integrating A/D converter, negative power supply generator and 3 wire serial int |
Microchip |
9332 |
TC534 |
The TC530/534 are serial analog data acquisition subsystems ideal for high precision measurements (up to 17bits plus sign). The TC530 consists of a dual slope integrating A/D converter, negative power supply generator and 3 wire serial int |
Microchip |
9333 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
9334 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
9335 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
9336 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
9337 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
9338 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
9339 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
9340 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
9341 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
9342 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
9343 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
9344 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
9345 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
9346 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
9347 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
9348 |
TC57512AD-15 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
9349 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
9350 |
TC57512AD-20 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
9351 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
9352 |
TC58FVB160AF |
16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
9353 |
TC58FVB160AXB-70 |
16-MBIT (2M � 8 BITS / 1M � 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
9354 |
TC58FVB321 |
32-MBIT (4M �� 8 BITS / 2M �� 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
9355 |
TC58FVM7B2 |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
9356 |
TC58FVM7B2AFT |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
9357 |
TC58FVM7T2AFT |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
9358 |
TC58FVT160 |
16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
9359 |
TC58FVT160 |
16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
9360 |
TC58FVT321 |
32-MBIT (4M �� 8 BITS / 2M �� 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
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