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Datasheets for ITS

Datasheets found :: 9895
Page: | 308 | 309 | 310 | 311 | 312 | 313 | 314 | 315 | 316 |
No. Part Name Description Manufacturer
9331 TC530 The TC530/534 are serial analog data acquisition subsystems ideal for high precision measurements (up to 17bits plus sign). The TC530 consists of a dual slope integrating A/D converter, negative power supply generator and 3 wire serial int Microchip
9332 TC534 The TC530/534 are serial analog data acquisition subsystems ideal for high precision measurements (up to 17bits plus sign). The TC530 consists of a dual slope integrating A/D converter, negative power supply generator and 3 wire serial int Microchip
9333 TC55465AJ-15 15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
9334 TC55465AJ-20 20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
9335 TC55465AJ-25 25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
9336 TC55465AJ-35 35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
9337 TC55465AP-20 20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
9338 TC55465AP-25 25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
9339 TC55465AP-35 35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
9340 TC5565AFL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
9341 TC5565AFL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
9342 TC5565AFL-12 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
9343 TC5565AFL-15 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
9344 TC5565APL 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
9345 TC5565APL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
9346 TC5565APL-12 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
9347 TC5565APL-15 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
9348 TC57512AD-15 65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY etc
9349 TC57512AD-15 150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory TOSHIBA
9350 TC57512AD-20 65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY etc
9351 TC57512AD-20 200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory TOSHIBA
9352 TC58FVB160AF 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY TOSHIBA
9353 TC58FVB160AXB-70 16-MBIT (2M � 8 BITS / 1M � 16 BITS) CMOS FLASH MEMORY TOSHIBA
9354 TC58FVB321 32-MBIT (4M �� 8 BITS / 2M �� 16 BITS) CMOS FLASH MEMORY TOSHIBA
9355 TC58FVM7B2 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY TOSHIBA
9356 TC58FVM7B2AFT 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY TOSHIBA
9357 TC58FVM7T2AFT 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY TOSHIBA
9358 TC58FVT160 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY TOSHIBA
9359 TC58FVT160 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY TOSHIBA
9360 TC58FVT321 32-MBIT (4M �� 8 BITS / 2M �� 16 BITS) CMOS FLASH MEMORY TOSHIBA


Datasheets found :: 9895
Page: | 308 | 309 | 310 | 311 | 312 | 313 | 314 | 315 | 316 |



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