DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for REE

Datasheets found :: 9548
Page: | 311 | 312 | 313 | 314 | 315 | 316 | 317 | 318 | 319 |
No. Part Name Description Manufacturer
9421 VWO60 Three Phase AC Controller Modules IXYS Corporation
9422 VYK70 Three Thyristor Module IXYS Corporation
9423 VYK70-08IO7 Power Modules/Rectifier Bridge Modules: Three Phase, Half-control Rectifier Bridges / Three Phase, Full-control IXYS
9424 VYK70-08IO7 Power Modules/Rectifier Bridge Modules: Three Phase, Half-control Rectifier Bridges / Three Phase, Full-control IXYS
9425 VYK70-08IO7 Three Thyristor Module IXYS Corporation
9426 VYK70-12IO7 Power Modules/Rectifier Bridge Modules: Three Phase, Half-control Rectifier Bridges / Three Phase, Full-control IXYS
9427 VYK70-12IO7 Power Modules/Rectifier Bridge Modules: Three Phase, Half-control Rectifier Bridges / Three Phase, Full-control IXYS
9428 VYK70-12IO7 Three Thyristor Module IXYS Corporation
9429 VYK70-14IO7 Power Modules/Rectifier Bridge Modules: Three Phase, Half-control Rectifier Bridges / Three Phase, Full-control IXYS
9430 VYK70-14IO7 Power Modules/Rectifier Bridge Modules: Three Phase, Half-control Rectifier Bridges / Three Phase, Full-control IXYS
9431 VYK70-14IO7 Three Thyristor Module IXYS Corporation
9432 VYK70-16IO7 Three Thyristor Module IXYS Corporation
9433 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9434 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9435 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9436 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9437 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9438 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9439 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9440 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9441 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9442 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9443 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9444 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9445 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9446 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9447 W6NXD3L-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9448 W6PXD3O-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
9449 W91320 TONE/PULSE DIALER WITH HANDFREE LOCK AND HOLD FUNCTION Winbond Electronics
9450 W91320ALN TONE/PULSE DIALER WITH HANDFREE LOCK AND HOLD FUNCTION Winbond Electronics


Datasheets found :: 9548
Page: | 311 | 312 | 313 | 314 | 315 | 316 | 317 | 318 | 319 |



© 2024 - www Datasheet Catalog com