| No. |
Part Name |
Description |
Manufacturer |
| 9481 |
UTC2822 |
Dual Low Voltage Power Amplifier |
Hangzhou Silan Microelectronics |
| 9482 |
UX-FOB |
High Voltage Power Dioes Standard and Ultra Recovery |
HV Component |
| 9483 |
V15A45VI |
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER) |
Korea Electronics (KEC) |
| 9484 |
V6130 |
Accurate Power Surveillance and Software Monitoring |
EM Microelectronic-Marin SA |
| 9485 |
V61308P |
Accurate Power Surveillance and Software Monitoring |
EM Microelectronic-Marin SA |
| 9486 |
V61308S |
Accurate Power Surveillance and Software Monitoring |
EM Microelectronic-Marin SA |
| 9487 |
VFC121 |
Precision Single Power Supply VOLTAGE-TO-FREQUENCY CONVERTER |
Burr Brown |
| 9488 |
VFC121 |
Precision Single Power Supply Voltage-to-Frequency Converter 14-PDIP |
Texas Instruments |
| 9489 |
VFC121AP |
Precision Single Power Supply VOLTAGE-TO-FREQUENCY CONVERTER |
Burr Brown |
| 9490 |
VFC121BP |
Precision Single Power Supply VOLTAGE-TO-FREQUENCY CONVERTER |
Burr Brown |
| 9491 |
VFC121BP |
Precision Single Power Supply Voltage-to-Frequency Converter 14-PDIP |
Texas Instruments |
| 9492 |
VSC9184 |
Pointer processor and frame aligner. 3.3V I/O and 2.5 core power supplies |
Vitesse Semiconductor Corporation |
| 9493 |
VUM25-05 |
Rectifier Module for Three Phase Power Factor Correction |
IXYS Corporation |
| 9494 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9495 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9496 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9497 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9498 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9499 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9500 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9501 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9502 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9503 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9504 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9505 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9506 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9507 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9508 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9509 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 9510 |
W8486A |
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz |
Agilent (Hewlett-Packard) |
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