| No. |
Part Name |
Description |
Manufacturer |
| 9601 |
BCP69 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 9602 |
BCP69-10 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 9603 |
BCP69-16 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 9604 |
BCP69-25 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 9605 |
BCP69T1 |
MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT |
Motorola |
| 9606 |
BCP70 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) |
Siemens |
| 9607 |
BCP70M |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) |
Siemens |
| 9608 |
BCP71 |
NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
Siemens |
| 9609 |
BCP71M |
NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
Siemens |
| 9610 |
BCP72 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain) |
Siemens |
| 9611 |
BCP72M |
PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
Siemens |
| 9612 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9613 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9614 |
BCR08PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
| 9615 |
BCR10 |
NPN/PNP Silicon Digital Transistor Array |
Infineon |
| 9616 |
BCR10 |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) |
Siemens |
| 9617 |
BCR108 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit |
Siemens |
| 9618 |
BCR108S |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 9619 |
BCR108W |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 9620 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9621 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9622 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9623 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9624 |
BCR10PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
| 9625 |
BCR112 |
NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) |
Siemens |
| 9626 |
BCR112W |
NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) |
Siemens |
| 9627 |
BCR116 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 9628 |
BCR116W |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 9629 |
BCR119 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 9630 |
BCR119S |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
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