| No. |
Part Name |
Description |
Manufacturer |
| 961 |
STW11NK90Z |
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package |
ST Microelectronics |
| 962 |
STW9NA80 |
N - CHANNEL 800V - 0.85Ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 963 |
STW9NB80 |
N-CHANNEL 800V - 0.85 Ohm - 9.3A - TO-247 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 964 |
STW9NB80 |
N-CHANNEL 900V - 0.85 OHM - 9.3A - TO-247 POWERMESH MOSFET |
SGS Thomson Microelectronics |
| 965 |
STW9NB80 |
N-CHANNEL 900V - 0.85 OHM - 9.3A - TO-247 POWERMESH MOSFET |
ST Microelectronics |
| 966 |
STW9NB90 |
N-CHANNEL 900V - 0.85 Ohms - 9.7A - TO-247 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 967 |
STW9NB90 |
N-CHANNEL 900V - 0.85 OHM - 9.7A - TO-247 POWERMESH MOSFET |
ST Microelectronics |
| 968 |
STW9NC80Z |
N-CHANNEL 800 V - 0.82 OHM - 9.4 A TO-247 ZENER-PROTECTED POWERMESH III MOSFET |
ST Microelectronics |
| 969 |
TC5517CF-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 970 |
TC5517CF-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 971 |
TC5517CFL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 972 |
TC5517CFL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 973 |
TC5517CP-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 974 |
TC5517CP-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 975 |
TC5517CPL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 976 |
TC5517CPL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 977 |
TCA520B |
V(cc): 2 to 20V; I(cc): 0.8mA; ; bipolar integrated operational amplifier for low-power and low-voltage applications |
Philips |
| 978 |
TCA520D |
V(cc): 2 to 20V; I(cc): 0.8mA; ; bipolar integrated operational amplifier for low-power and low-voltage applications |
Philips |
| 979 |
TCC20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 980 |
TIS93 |
Trans GP BJT PNP 40V 0.8A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 981 |
TLV1112 |
1.2-V, 0.8-A Low-Dropout Voltage Regulator |
Texas Instruments |
| 982 |
TLV1112IDCY |
1.2-V, 0.8-A Low-Dropout Voltage Regulator |
Texas Instruments |
| 983 |
TLV1112IDCYR |
1.2-V, 0.8-A Low-Dropout Voltage Regulator |
Texas Instruments |
| 984 |
TLV1112IKCS |
1.2-V, 0.8-A Low-Dropout Voltage Regulator |
Texas Instruments |
| 985 |
TLV1112IKTPR |
1.2-V, 0.8-A Low-Dropout Voltage Regulator |
Texas Instruments |
| 986 |
TLV1112IKTT |
1.2-V, 0.8-A Low-Dropout Voltage Regulator |
Texas Instruments |
| 987 |
TLV1112IKTTR |
1.2-V, 0.8-A Low-Dropout Voltage Regulator |
Texas Instruments |
| 988 |
TLV705 |
200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP 4-DSBGA -40 to 125 |
Texas Instruments |
| 989 |
TLV705 |
200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP 4-DSBGA -40 to 125 |
Texas Instruments |
| 990 |
TLV70512 |
200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP |
Texas Instruments |
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