| No. |
Part Name |
Description |
Manufacturer |
| 961 |
ISPLS1032EA-100LT100 |
100 MHz in-system prommable high density PLD |
Lattice Semiconductor |
| 962 |
ISPLSI2192VE-100LB144 |
100 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
| 963 |
ISPLSI2192VE-100LT128 |
100 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
| 964 |
ISPLSI5256VE-100LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 965 |
ISPLSI5256VE-100LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 966 |
ISPLSI5256VE-100LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 967 |
ISPLSI5256VE-100LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 968 |
ISPLSI5256VE-100LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 969 |
ISPLSI5256VE-100LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 970 |
ISPLSI5256VE-100LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 971 |
ISPLSI5256VE-100LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 972 |
ISPLSI5512VE-100LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 973 |
ISPLSI5512VE-100LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 974 |
ISPLSI5512VE-100LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 975 |
ISPLSI5512VE-100LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 976 |
ISPLSI5512VE-100LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 977 |
ISPLSI5512VE-100LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 978 |
ISPLSI5512VE-100LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 979 |
ISPLSI5512VE-100LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 980 |
KM416L8031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
| 981 |
KM416L8031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
| 982 |
KM44L32031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 983 |
KM44L32031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 984 |
KM44S3203BT-G_FH |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). |
Samsung Electronic |
| 985 |
KM44S3203BT-G_FL |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). |
Samsung Electronic |
| 986 |
KM48L16031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 987 |
KM48L16031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 988 |
KMM366S1623BT-GH |
PC100 SDRAM module. 100 MHz, 10 ns speed |
Samsung Electronic |
| 989 |
KMM366S1623BT-GL |
PC100 SDRAM module. 100 MHz, 10 ns speed |
Samsung Electronic |
| 990 |
KS8995MA |
Integrated 5-Port 10/100 Managed Switch |
Micrel Semiconductor |
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