| No. |
Part Name |
Description |
Manufacturer |
| 961 |
A-801SR |
Common anode super red single digit display |
PARA Light |
| 962 |
A-801Y |
Common anode yellow single digit display |
PARA Light |
| 963 |
A-808E |
Common anode hi.effi red alpha-numeric display |
PARA Light |
| 964 |
A-808G |
Common anode green alpha-numeric display |
PARA Light |
| 965 |
A-808H |
Common anode red alpha-numeric display |
PARA Light |
| 966 |
A-808SR |
Common anode super red alpha-numeric display |
PARA Light |
| 967 |
A-808Y |
Common anode yellow alpha-numeric display |
PARA Light |
| 968 |
A1801 |
Common Mode Choke |
Pulse Engineering |
| 969 |
AD629 |
High Common Mode Voltage Difference Amplifier |
Analog Devices |
| 970 |
ADG3242 |
2.5 V/3.3 V, 2-Bit, Common Control Level Translator Bus Switch |
Analog Devices |
| 971 |
ADG3242BRJ-R2 |
2.5 V/3.3 V, 2-Bit, Common Control Level Translator Bus Switch |
Analog Devices |
| 972 |
ADG3242BRJ-REEL |
2.5 V/3.3 V, 2-Bit, Common Control Level Translator Bus Switch |
Analog Devices |
| 973 |
ADG3242BRJ-REEL7 |
2.5 V/3.3 V, 2-Bit, Common Control Level Translator Bus Switch |
Analog Devices |
| 974 |
AF102 |
Application Note - Common base IF amplifier stage |
COMPELEC |
| 975 |
AF4901PS |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) common drain MOSFET |
Anachip |
| 976 |
AF4901PSA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) common drain MOSFET |
Anachip |
| 977 |
AF4901PSL |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) common drain MOSFET |
Anachip |
| 978 |
AF4901PSLA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) common drain MOSFET |
Anachip |
| 979 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 980 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 981 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 982 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 983 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 984 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 985 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 986 |
AM82022-020 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 987 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 988 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 989 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 990 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
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