| No. |
Part Name |
Description |
Manufacturer |
| 961 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 962 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 963 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 964 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 965 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 966 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 967 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 968 |
2SA78 |
High-Speed Switching Transistor |
TOSHIBA |
| 969 |
2SB1108 |
Medium Speed Switching Complementary Pair with 2SD1608 |
Panasonic |
| 970 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 971 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 972 |
2SB1142 |
PNP Epitaxial Planar Silicon Transistors 50V/2.5A High-Speed Switching Applications |
SANYO |
| 973 |
2SB1285 |
Low-speed switching Darlington transistor |
Shindengen |
| 974 |
2SB1448 |
Low-speed switching Darlington transistor |
Shindengen |
| 975 |
2SB1468 |
PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 976 |
2SB150 |
Low-Speed Switching Transistor |
TOSHIBA |
| 977 |
2SB1578 |
Low freq. power amp., medium-speed switching transistor |
NEC |
| 978 |
2SB201 |
Low-Speed Switching Transistor |
TOSHIBA |
| 979 |
2SB265 |
Low-Speed Switching Transistor |
TOSHIBA |
| 980 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
| 981 |
2SB40 |
Low-Speed Switching Transistor |
TOSHIBA |
| 982 |
2SB424 |
Low-Speed Switching Transistor |
TOSHIBA |
| 983 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 984 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 985 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 986 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 987 |
2SB559 |
Low Frequency Power Amp, Medium Speed Switching Applications |
Unknow |
| 988 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
| 989 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
| 990 |
2SB731 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
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