| No. |
Part Name |
Description |
Manufacturer |
| 961 |
P2478-01 |
Resin coating.dual type |
Hamamatsu Corporation |
| 962 |
P2532-01 |
PbS photoconductive detector |
Hamamatsu Corporation |
| 963 |
P2680-02 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 964 |
P2680-03 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 965 |
P2682-01 |
PbS photoconductive detector |
Hamamatsu Corporation |
| 966 |
P2748 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 967 |
P2748-40 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 968 |
P2748-41 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 969 |
P2748-42 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 970 |
P2750 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 971 |
P2750-06 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 972 |
P2750-08 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 973 |
P3207-05 |
PbSe photoconductive detector |
Hamamatsu Corporation |
| 974 |
P3257 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 975 |
P3257-01 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 976 |
P3257-10 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 977 |
P3257-25 |
MCT photoconductive detector |
Hamamatsu Corporation |
| 978 |
P3257-30 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 979 |
P3257-31 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 980 |
P3257-50 |
Allowable current:40mA; MCT photoconductive detector: dewar type detector with high sensitivity and high-speed response in long wavelength range |
Hamamatsu Corporation |
| 981 |
P368 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 982 |
P380 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 983 |
P380-5R |
Resin coating type (5R type) |
Hamamatsu Corporation |
| 984 |
P380-7R |
CbS photoconductive cell |
Hamamatsu Corporation |
| 985 |
P3872 |
CdS photoconductive cell |
Hamamatsu Corporation |
| 986 |
P3981 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 987 |
P3981-01 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
| 988 |
P4245 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 989 |
P4247-16 |
InSb photovoltaic detector |
Hamamatsu Corporation |
| 990 |
P4247-44 |
InSb photovoltaic detector |
Hamamatsu Corporation |
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