| No. |
Part Name |
Description |
Manufacturer |
| 961 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 962 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 963 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 964 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 965 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 966 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 967 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 968 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 969 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 970 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 971 |
2N495 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 972 |
2N4953_D26Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 973 |
2N4957 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 974 |
2N4957 |
Application Note - UHF amplifier design using data sheet design curves |
Motorola |
| 975 |
2N4958 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 976 |
2N4959 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 977 |
2N496 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 978 |
2N4974 |
PNP silicon annular darlington amplifier |
Motorola |
| 979 |
2N4975 |
PNP silicon annular darlington amplifier |
Motorola |
| 980 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 981 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 982 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 983 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 984 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 985 |
2N5078 |
N-Channel Field Effect Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 986 |
2N5086 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 987 |
2N5086 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 988 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 989 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 990 |
2N5086BU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
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