No. |
Part Name |
Description |
Manufacturer |
961 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
962 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
963 |
2N495 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
964 |
2N4953_D26Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
965 |
2N4957 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
966 |
2N4957 |
Application Note - UHF amplifier design using data sheet design curves |
Motorola |
967 |
2N4958 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
968 |
2N4959 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
969 |
2N496 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
970 |
2N4974 |
PNP silicon annular darlington amplifier |
Motorola |
971 |
2N4975 |
PNP silicon annular darlington amplifier |
Motorola |
972 |
2N5078 |
N-Channel Field Effect Transistor RF/IF Amplifier |
Amelco Semiconductor |
973 |
2N5078 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
974 |
2N5086 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
975 |
2N5086 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
976 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
977 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
978 |
2N5086BU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
979 |
2N5086TA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
980 |
2N5086TAR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
981 |
2N5086TF |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
982 |
2N5086TFR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
983 |
2N5087 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
984 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
985 |
2N5087 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
986 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
987 |
2N5087 |
Small Signal Amplifier PNP |
ON Semiconductor |
988 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
989 |
2N5087-D |
Amplifier Transistor PNP Silicon |
ON Semiconductor |
990 |
2N5087BU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
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