| No. |
Part Name |
Description |
Manufacturer |
| 961 |
2SK2857 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
| 962 |
2SK2858 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
| 963 |
2SK3054 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 964 |
2SK3105 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 965 |
2SK3107 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
| 966 |
2SK3408 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 967 |
2SK4027 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
| 968 |
2SK4028 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
| 969 |
2SK48 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
| 970 |
2SK660 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
| 971 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 972 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 973 |
30A01C |
PNP Bipolar Transistor for Audio Power Amplifier Applications |
ON Semiconductor |
| 974 |
3110-12SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
| 975 |
3110-14SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
| 976 |
3110-16SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
| 977 |
3110-6SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
| 978 |
3110-8SA |
3100 SERIES LOW PROFILE CONNECTOR FOR PREVENTING EMI |
Hirose Electric |
| 979 |
3SK222 |
RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 980 |
3WK164 43 |
Transmitter with FC connector for GI fibre |
Tesla Elektronicke |
| 981 |
3WK164 44 |
Transmitter with FC connector for GI fibre |
Tesla Elektronicke |
| 982 |
4000 |
Common base silicon NPN microwave power transistor featuring a unique Microgrid™ structure |
SGS Thomson Microelectronics |
| 983 |
40080 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
| 984 |
40081 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
| 985 |
40082 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
| 986 |
40446 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
| 987 |
40581 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
| 988 |
40582 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
| 989 |
40820 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for RF amplifier |
RCA Solid State |
| 990 |
40821 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for Mixer |
RCA Solid State |
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