No. |
Part Name |
Description |
Manufacturer |
961 |
KM416V1204BJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
962 |
KM416V1204BJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
963 |
KM416V1204BJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
964 |
KM416V1204BJ-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
965 |
KM416V1204BT-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
966 |
KM416V1204BT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
967 |
KM416V1204BT-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
968 |
KM416V1204BT-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
969 |
KM416V1204BT-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
970 |
KM416V1204BT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
971 |
KM416V1204C |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
972 |
KM416V1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
973 |
KM416V1204CJ-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
974 |
KM416V1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
975 |
KM416V1204CJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
976 |
KM416V1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
977 |
KM416V1204CJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
978 |
KM416V1204CJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
979 |
KM416V1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
980 |
KM416V1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
981 |
KM416V1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
982 |
KM416V1204CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
983 |
KM416V1204CT-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
984 |
KM416V1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
985 |
KM416V1204CT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
986 |
KM416V1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
987 |
KM416V1204CT-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
988 |
KM416V1204CT-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
989 |
KM416V1204CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
990 |
KM416V1204CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
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