| No. |
Part Name |
Description |
Manufacturer |
| 9661 |
2SA1295 |
Trans GP BJT PNP 230V 17A 3-Pin MT-200 Bulk |
New Jersey Semiconductor |
| 9662 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 9663 |
2SA1301 |
Trans GP BJT PNP 50V 0.1A 3-Pin NS-B1 |
New Jersey Semiconductor |
| 9664 |
2SA1304 |
Trans GP BJT PNP 150V 1.5A 3-Pin TO-220IS |
New Jersey Semiconductor |
| 9665 |
2SA1305 |
Trans GP BJT PNP 50V 0.1A 3-Pin NS-B1 |
New Jersey Semiconductor |
| 9666 |
2SA1307 |
Trans GP BJT PNP 50V 0.1A 3-Pin NS-B1 |
New Jersey Semiconductor |
| 9667 |
2SA1349 |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL |
TOSHIBA |
| 9668 |
2SA1352 |
Trans GP BJT PNP 200V 0.1A 3-Pin TO-126 |
New Jersey Semiconductor |
| 9669 |
2SA1357 |
Trans GP BJT PNP 20V 5A 3-Pin TO-126IS |
New Jersey Semiconductor |
| 9670 |
2SA1358 |
Trans GP BJT PNP 120V 1A 3-Pin TO-126IS |
New Jersey Semiconductor |
| 9671 |
2SA1360 |
Trans GP BJT PNP 150V 0.05A 3-Pin TO-126IS |
New Jersey Semiconductor |
| 9672 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 9673 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 9674 |
2SA1612 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
| 9675 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 9676 |
2SA1801 |
TRANSISTOR SLICON PNP EPITAXIAL TYPE VIDEO OUTPUT STAGE IN HIGH RESOLUTION DISPLAY |
TOSHIBA |
| 9677 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 9678 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 9679 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 9680 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 9681 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 9682 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
| 9683 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 9684 |
2SA354 |
Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter |
Hitachi Semiconductor |
| 9685 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 9686 |
2SA495 |
Trans GP BJT NPN/PNP 15V 0.5A 3-Pin Case MCP |
New Jersey Semiconductor |
| 9687 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 9688 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 9689 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 9690 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
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