| No. |
Part Name |
Description |
Manufacturer |
| 9661 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 9662 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 9663 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 9664 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 9665 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 9666 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 9667 |
TC5564AFL-15 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
| 9668 |
TC5564AFL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
| 9669 |
TC5564APL-15 |
-0.3 to 7V; 1W; 150ns; 8.192 word x 8bit MOS static RAM |
TOSHIBA |
| 9670 |
TC5564APL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
| 9671 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 9672 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 9673 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 9674 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 9675 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 9676 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 9677 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 9678 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 9679 |
TC558128AJ |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 9680 |
TC558128AJ-15 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 9681 |
TC558128AJ-20 |
131,072-word by 8 bit CMOS static RAM, access time 20ns |
TOSHIBA |
| 9682 |
TC558128BFT-12 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 9683 |
TC558128BFT-15 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 9684 |
TC558128BJ |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 9685 |
TC558128BJ-12 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 9686 |
TC558128BJ-15 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 9687 |
TC55NEM208A |
SRAM - Low Power |
TOSHIBA |
| 9688 |
TC55NEM208A-V |
SRAM - Low Power |
TOSHIBA |
| 9689 |
TC55NEM208AFPN |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
TOSHIBA |
| 9690 |
TC55NEM208AFPN55 |
524,288-WORD BY 8-BIT STATIC RAM |
TOSHIBA |
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