No. |
Part Name |
Description |
Manufacturer |
9721 |
CY7C1310V18-200BZC |
18-Mb SRAM two-word burst architecture, 200MHz |
Cypress |
9722 |
CY7C1312V18-133BZC |
18-Mb SRAM two-word burst architecture, 133MHz |
Cypress |
9723 |
CY7C1312V18-167BZC |
18-Mb SRAM two-word burst architecture, 167MHz |
Cypress |
9724 |
CY7C1312V18-200BZC |
18-Mb SRAM two-word burst architecture, 200MHz |
Cypress |
9725 |
CY7C1314V18-133BZC |
18-Mb SRAM two-word burst architecture, 133MHz |
Cypress |
9726 |
CY7C1314V18-167BZC |
18-Mb SRAM two-word burst architecture, 167MHz |
Cypress |
9727 |
CY7C1314V18-200BZC |
18-Mb SRAM two-word burst architecture, 200MHz |
Cypress |
9728 |
CY7C1316V18-167BZC |
18-Mb DDR-II SRAM two-word burst architecture, 167MHz |
Cypress |
9729 |
CY7C1316V18-200BZC |
18-Mb DDR-II SRAM two-word burst architecture, 200MHz |
Cypress |
9730 |
CY7C1316V18-250BZC |
18-Mb DDR-II SRAM two-word burst architecture, 250MHz |
Cypress |
9731 |
CY7C1316V18-300BZC |
18-Mb DDR-II SRAM two-word burst architecture, 300MHz |
Cypress |
9732 |
CY7C1318V18-167BZC |
18-Mb DDR-II SRAM two-word burst architecture, 167MHz |
Cypress |
9733 |
CY7C1318V18-200BZC |
18-Mb DDR-II SRAM two-word burst architecture, 200MHz |
Cypress |
9734 |
CY7C1318V18-250BZC |
18-Mb DDR-II SRAM two-word burst architecture, 250MHz |
Cypress |
9735 |
CY7C1318V18-300BZC |
18-Mb DDR-II SRAM two-word burst architecture, 300MHz |
Cypress |
9736 |
CY7C1320V18-167BZC |
18-Mb DDR-II SRAM two-word burst architecture, 167MHz |
Cypress |
9737 |
CY7C1320V18-200BZC |
18-Mb DDR-II SRAM two-word burst architecture, 200MHz |
Cypress |
9738 |
CY7C1320V18-250BZC |
18-Mb DDR-II SRAM two-word burst architecture, 250MHz |
Cypress |
9739 |
CY7C1320V18-300BZC |
18-Mb DDR-II SRAM two-word burst architecture, 300MHz |
Cypress |
9740 |
D, G |
Special Purpose, High Voltage, Radial Bands or Ferrule Terminals, Varnish Coated, Vinyl Protective Sleeve Available, Model G is Non-Inductive |
Vishay |
9741 |
D, G |
Special Purpose, High Voltage, Radial Bands or Ferrule Terminals, Varnish Coated, Vinyl Protective Sleeve Available, Model G is Non-Inductive |
Vishay |
9742 |
D, G |
Special Purpose, High Voltage, Radial Bands or Ferrule Terminals, Varnish Coated, Vinyl Protective Sleeve Available, Model G is Non-Inductive |
Vishay |
9743 |
D...-CRCW |
Metal Glaze on High Quality Ceramic, Protective Over Glaze, SnPb Contacts on Ni Barrier Layer, Excellent Stability at Different Environmental Conditions, Suitable for Commercial and Special Applications |
Vishay |
9744 |
D..CRCW....LR |
Thick Film, Rectangular, Low Value Resistors, Special metal glaze on high quality ceramic, Protective overglaze, SnPb contacts on Ni barrier layer, Suitable for current sensors and shunts |
Vishay |
9745 |
D..P/CRCW |
Metal Glaze on High Quality Ceramic, Protective Over Glaze, SnPb Contacts on Ni Barrier Layer, Excellent Stability at Different Environmental Conditions |
Vishay |
9746 |
D..TR/CRCW....- 29 |
User Trimmable, Metal Glaze on High Quality Ceramic, SnPb Contacts on Ni Barrier Layer |
Vishay |
9747 |
D126D |
4 NAND gates with 2 inputs each, collector open, 15V output reverse voltage, possibly equivalent SN7426N |
RFT |
9748 |
D150D |
2 AND-NOR gates with 2 x 2 inputs each, 1 gate with expansion the entrance, possibly equivalent SN7450N |
RFT |
9749 |
D178S1000 |
Silicon diode, fast recovery rectifier |
IPRS Baneasa |
9750 |
D178S1100 |
Silicon diode, fast recovery rectifier |
IPRS Baneasa |
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