| No. |
Part Name |
Description |
Manufacturer |
| 9721 |
HM5165165FLTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 9722 |
HM5165165FLTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 9723 |
HM5165165FTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 9724 |
HM5165165FTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 9725 |
HM5165165J-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 9726 |
HM5165165J-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 9727 |
HM5165165LJ-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 9728 |
HM5165165LJ-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 9729 |
HM5165165LTT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 9730 |
HM5165165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 9731 |
HM5165165TT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 9732 |
HM5165165TT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 9733 |
HM5165405FJ-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
| 9734 |
HM5165405FJ-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 9735 |
HM5165405FLJ-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
| 9736 |
HM5165405FLJ-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 9737 |
HM5165405FLTT-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
| 9738 |
HM5165405FLTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 9739 |
HM5165405FTT-5 |
16M x 4-bit EDO DRAM, 50ns |
Hitachi Semiconductor |
| 9740 |
HM5165405FTT-6 |
16M x 4-bit EDO DRAM, 60ns |
Hitachi Semiconductor |
| 9741 |
HM51S4260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9742 |
HM51S4260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9743 |
HM51S4260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9744 |
HM51S4260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9745 |
HM51S4260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9746 |
HM51S4260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9747 |
HM51S4260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9748 |
HM51S4260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9749 |
HM51S4260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9750 |
HM51S4260ALTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| | | |
