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Datasheets for SISTOR

Datasheets found :: 34701
Page: | 321 | 322 | 323 | 324 | 325 | 326 | 327 | 328 | 329 |
No. Part Name Description Manufacturer
9721 BCP68-10 NPN Silicon AF Transistor (For general AF application High collector current High current gain) Siemens
9722 BCP68-16 NPN Silicon AF Transistor (For general AF application High collector current High current gain) Siemens
9723 BCP68-25 NPN Silicon AF Transistor (For general AF application High collector current High current gain) Siemens
9724 BCP68T1 MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT Motorola
9725 BCP69 PNP Silicon AF Transistor (For general AF application High collector current High current gain) Siemens
9726 BCP69-10 PNP Silicon AF Transistor (For general AF application High collector current High current gain) Siemens
9727 BCP69-16 PNP Silicon AF Transistor (For general AF application High collector current High current gain) Siemens
9728 BCP69-25 PNP Silicon AF Transistor (For general AF application High collector current High current gain) Siemens
9729 BCP69T1 MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT Motorola
9730 BCP70 PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) Siemens
9731 BCP70M PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) Siemens
9732 BCP71 NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) Siemens
9733 BCP71M NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) Siemens
9734 BCP72 PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain) Siemens
9735 BCP72M PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) Siemens
9736 BCR08AM-14 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
9737 BCR08AS-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
9738 BCR08PN NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) Siemens
9739 BCR10 NPN/PNP Silicon Digital Transistor Array Infineon
9740 BCR10 NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) Siemens
9741 BCR108 NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit Siemens
9742 BCR108S NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) Siemens
9743 BCR108S E6327 Dual Built-in Resistor AF Transistors; 2xNPN; Industrial Standars Types, Icmax of 100mA; Vceo of 50V Infineon
9744 BCR108W NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) Siemens
9745 BCR10CM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
9746 BCR10CM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
9747 BCR10CS Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
9748 BCR10PM Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
9749 BCR10PN NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) Siemens
9750 BCR112 NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) Siemens


Datasheets found :: 34701
Page: | 321 | 322 | 323 | 324 | 325 | 326 | 327 | 328 | 329 |



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