| No. |
Part Name |
Description |
Manufacturer |
| 9751 |
B8S |
MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER(VOLTAGE - 100 to 1000 Volts CURRENT - 0.5 Amperes) |
Panjit International Inc |
| 9752 |
B8S |
MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER(VOLTAGE - 100 to 1000 Volts CURRENT - 0.5 Amperes) |
Panjit International Inc |
| 9753 |
BA157 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 9754 |
BA157 |
FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 9755 |
BA158 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 9756 |
BA158 |
FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 9757 |
BA159 |
FAST RECOVERY RECTIFIER Reverse Voltage - 400 to 1000 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 9758 |
BA159 |
0.4A 1000V FAST RECTIFIER DIODE |
IPRS Baneasa |
| 9759 |
BA159 |
FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 9760 |
BAM20 |
20 WATTS - 27 VOLTS 100-160 MHz |
Acrian |
| 9761 |
BAR60 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
Siemens |
| 9762 |
BAR61 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
Siemens |
| 9763 |
BAS16 |
350mW 100Volt Switching Diode |
Micro Commercial Components |
| 9764 |
BAT15-098 |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
Siemens |
| 9765 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 9766 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 9767 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 9768 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 9769 |
BAT18-04 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 9770 |
BAT18-05 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 9771 |
BAT18-06 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 9772 |
BAT19 |
Diode Schottky 10V 0.03A 2-Pin DO-35 |
New Jersey Semiconductor |
| 9773 |
BAX280 |
FRED Diode (VRRM 1000 V IFRMS 5.5 A 55 ns Soft recovery characteristics) |
Siemens |
| 9774 |
BC107C |
0.600W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.200A Ic, 100 hFE. |
Continental Device India Limited |
| 9775 |
BC108C |
0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 100 hFE. |
Continental Device India Limited |
| 9776 |
BC109C |
0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 100 hFE. |
Continental Device India Limited |
| 9777 |
BC184B |
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - hFE |
Continental Device India Limited |
| 9778 |
BC184C |
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - hFE |
Continental Device India Limited |
| 9779 |
BC184L |
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - 800 hFE |
Continental Device India Limited |
| 9780 |
BC184LB |
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - hFE |
Continental Device India Limited |
| | | |
