| No. |
Part Name |
Description |
Manufacturer |
| 9751 |
CLVC1G125MDCKREP |
Enhanced Product Single Bus Buffer Gate With 3-State Outputs 5-SC70 -55 to 125 |
Texas Instruments |
| 9752 |
CLVC1G125MDCKREPG4 |
Enhanced Product Single Bus Buffer Gate With 3-State Outputs 5-SC70 -55 to 125 |
Texas Instruments |
| 9753 |
CLVC1G125QDBVRQ1 |
Automotive Catalog Single Bus Buffer Gate With 3-State Output 5-SOT-23 -40 to 125 |
Texas Instruments |
| 9754 |
CLVC1G126IDCKREP |
Enhanced Product Single Bus Buffer Gate With 3-State Outputs 5-SC70 -40 to 85 |
Texas Instruments |
| 9755 |
CLVC1G3208IDCKRQ1 |
Automotive Catalog Single 3-Input Positive OR-AND Gate 6-SC70 -40 to 85 |
Texas Instruments |
| 9756 |
CLVC1G32MDCKREPG4 |
Enhanced Product Single 2-Input Positive-Or Gate 5-SC70 -55 to 125 |
Texas Instruments |
| 9757 |
CLVC2G125IDCTRQ1 |
Dual Bus Buffer Gate with 3-State Outputs |
Texas Instruments |
| 9758 |
CLVC2G125IDCTRQ1 |
Dual Bus Buffer Gate with 3-State Outputs |
Texas Instruments |
| 9759 |
CLVC2G125IDCURQ1 |
Automotive Catalog Dual Bus Buffer Gate with 3-State Outputs 8-VSSOP -40 to 85 |
Texas Instruments |
| 9760 |
CLVC2G126MDCUTEP |
Dual Bus Buffer Gate With 3-State Outputs 8-VSSOP -55 to 125 |
Texas Instruments |
| 9761 |
CM100DU-12F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 9762 |
CM100DU-24F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 9763 |
CM100HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 9764 |
CM100TJ-12F |
Trench Gate Design 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 9765 |
CM100TJ-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 9766 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 9767 |
CM100TU-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 9768 |
CM1200HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 9769 |
CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 9770 |
CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 9771 |
CM1200HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 9772 |
CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 9773 |
CM1200HC-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 9774 |
CM150DU-12F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 9775 |
CM150DU-24F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 9776 |
CM150TJ-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 9777 |
CM150TU-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 9778 |
CM200DU-12F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 9779 |
CM200DU-24F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 9780 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
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