No. |
Part Name |
Description |
Manufacturer |
9781 |
3EZ170 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
9782 |
3EZ170D |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
9783 |
3EZ170D1 |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
9784 |
3EZ170D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 170 V. 1% tolerance. |
Motorola |
9785 |
3EZ170D10 |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
9786 |
3EZ170D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 170 V. 10% tolerance. |
Motorola |
9787 |
3EZ170D2 |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
9788 |
3EZ170D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 170 V. 2% tolerance. |
Motorola |
9789 |
3EZ170D3 |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
9790 |
3EZ170D4 |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
9791 |
3EZ170D5 |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
9792 |
3EZ170D5 |
3W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
9793 |
3EZ170D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 170 V. |
Motorola |
9794 |
3EZ17D5 |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
9795 |
3EZ17D5 |
3W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
9796 |
3EZ18 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
9797 |
3EZ18 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
9798 |
3EZ180 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
9799 |
3EZ180 |
180 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
9800 |
3EZ180 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
9801 |
3EZ180D |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
9802 |
3EZ180D1 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
9803 |
3EZ180D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 1% tolerance. |
Motorola |
9804 |
3EZ180D10 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
9805 |
3EZ180D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 10% tolerance. |
Motorola |
9806 |
3EZ180D2 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
9807 |
3EZ180D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 2% tolerance. |
Motorola |
9808 |
3EZ180D3 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
9809 |
3EZ180D4 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
9810 |
3EZ180D5 |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
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