DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for IFI

Datasheets found :: 156226
Page: | 323 | 324 | 325 | 326 | 327 | 328 | 329 | 330 | 331 |
No. Part Name Description Manufacturer
9781 1S30 SCHOTTKY BARRIER RECTIFIER Rectron Semiconductor
9782 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9783 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9784 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9785 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9786 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9787 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9788 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9789 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9790 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9791 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9792 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9793 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9794 1S4 TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER DC Components
9795 1S4 TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER DC Components
9796 1S4 1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) Panjit International Inc
9797 1S40 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Formosa MS
9798 1S40 1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts Micro Commercial Components
9799 1S40 SCHOTTKY BARRIER RECTIFIER Rectron Semiconductor
9800 1S410 Diffused silicon rectifier 3A 100V Texas Instruments
9801 1S410R Diffused silicon rectifier 3A 100V, reverse polarity Texas Instruments
9802 1S411 Diffused silicon rectifier 3A 200V Texas Instruments
9803 1S411R Diffused silicon rectifier 3A 200V, reverse polarity Texas Instruments
9804 1S413 Diffused silicon rectifier 3A 400V Texas Instruments
9805 1S413R Diffused silicon rectifier 3A 400V, reverse polarity Texas Instruments
9806 1S415 Diffused silicon rectifier 3A 600V Texas Instruments
9807 1S415R Diffused silicon rectifier 3A 600V, reverse polarity Texas Instruments
9808 1S417 Diffused silicon rectifier 3A 800V Texas Instruments
9809 1S417R Diffused silicon rectifier 3A 800V, reverse polarity Texas Instruments
9810 1S419 Diffused silicon rectifier 3A 1000V Texas Instruments


Datasheets found :: 156226
Page: | 323 | 324 | 325 | 326 | 327 | 328 | 329 | 330 | 331 |



© 2024 - www Datasheet Catalog com