| No. |
Part Name |
Description |
Manufacturer |
| 9781 |
2SC1968 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 9782 |
2SC1968A |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 9783 |
2SC1969 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 9784 |
2SC1970 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 9785 |
2SC1971 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 9786 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 9787 |
2SC1985 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 9788 |
2SC1986 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 9789 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 9790 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 9791 |
2SC2020 |
RP POWER TRANSISTOR |
SONY |
| 9792 |
2SC2022 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 9793 |
2SC2023 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 9794 |
2SC2025 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC2025, see the Electrical Characteristics table) |
NEC |
| 9795 |
2SC2027 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 9796 |
2SC2053 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 9797 |
2SC2055 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 9798 |
2SC2056 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 9799 |
2SC2060 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 9800 |
2SC2061 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 9801 |
2SC2073 |
POWER TRANSISTORS(1.5A,150V,25W) |
MOSPEC Semiconductor |
| 9802 |
2SC2073 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 9803 |
2SC2073 |
Silicon NPN triple diffused power transistor, power amplifier, vertical output applications |
TOSHIBA |
| 9804 |
2SC2073 |
Silicon NPN triple diffused power transistor, power amplifier, vertical output applications |
TOSHIBA |
| 9805 |
2SC2073A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS |
TOSHIBA |
| 9806 |
2SC2075 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 9807 |
2SC2078 |
NPN Epitaxial Planar Silicon Transistor 27MHz RF Power Amplifier Applications |
SANYO |
| 9808 |
2SC2078 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 9809 |
2SC2085 |
Power Transistor - Silicon PNP Triple-Diffused Planar Type |
Panasonic |
| 9810 |
2SC2085 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
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